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CIMulator: A Comprehensive Simulation Platform for Computing-In-Memory Circuit Macros with Low Bit-Width and Real Memory Materials
Authors:
Hoang-Hiep Le,
Md. Aftab Baig,
Wei-Chen Hong,
Cheng-Hsien Tsai,
Cheng-Jui Yeh,
Fu-Xiang Liang,
I-Ting Huang,
Wei-Tzu Tsai,
Ting-Yin Cheng,
Sourav De,
Nan-Yow Chen,
Wen-Jay Lee,
Ing-Chao Lin,
Da-Wei Chang,
Darsen D. Lu
Abstract:
This paper presents a simulation platform, namely CIMulator, for quantifying the efficacy of various synaptic devices in neuromorphic accelerators for different neural network architectures. Nonvolatile memory devices, such as resistive random-access memory, ferroelectric field-effect transistor, and volatile static random-access memory devices, can be selected as synaptic devices. A multilayer pe…
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This paper presents a simulation platform, namely CIMulator, for quantifying the efficacy of various synaptic devices in neuromorphic accelerators for different neural network architectures. Nonvolatile memory devices, such as resistive random-access memory, ferroelectric field-effect transistor, and volatile static random-access memory devices, can be selected as synaptic devices. A multilayer perceptron and convolutional neural networks (CNNs), such as LeNet-5, VGG-16, and a custom CNN named C4W-1, are simulated to evaluate the effects of these synaptic devices on the training and inference outcomes. The dataset used in the simulations are MNIST, CIFAR-10, and a white blood cell dataset. By applying batch normalization and appropriate optimizers in the training phase, neuromorphic systems with very low-bit-width or binary weights could achieve high pattern recognition rates that approach software-based CNN accuracy. We also introduce spiking neural networks with RRAM-based synaptic devices for the recognition of MNIST handwritten digits.
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Submitted 26 June, 2023;
originally announced June 2023.
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Alleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network
Authors:
Sourav De,
Hoang-Hiep Le,
Md. Aftab Baig,
Yao-Jen Lee,
Darsen D. Lu,
Thomas Kämpfe
Abstract:
This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniques to abate these impacts. We adopted a pre-trained artificial neural network (N.N.) with 96.4% inference accuracy on the MNIST dataset as the baseline. As an aftermath of temperature change, a compact model captured the…
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This paper reports the impacts of temperature variation on the inference accuracy of pre-trained all-ferroelectric FinFET deep neural networks, along with plausible design techniques to abate these impacts. We adopted a pre-trained artificial neural network (N.N.) with 96.4% inference accuracy on the MNIST dataset as the baseline. As an aftermath of temperature change, a compact model captured the conductance drift of a programmed cell over a wide range of gate biases. We observed a significant inference accuracy degradation in the analog neural network at 233 K for an N.N. trained at 300 K. Finally, we deployed binary neural networks with "read voltage" optimization to ensure immunity of N.N. to accuracy degradation under temperature variation, maintaining an inference accuracy of 96%. Keywords: Ferroelectric memories
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Submitted 15 August, 2022; v1 submitted 3 March, 2021;
originally announced March 2021.
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Compact Device Models for FinFET and Beyond
Authors:
Darsen D. Lu,
Mohan V. Dunga,
Ali M. Niknejad,
Chenming Hu,
Fu-Xiang Liang,
Wei-Chen Hung,
Jia-Wei Lee,
Chun-Hsiang Hsu,
Meng-Hsueh Chiang
Abstract:
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeling framework and symmetry preserving properties make them suitable for both analog/RF and digital design. In the era of artificial intelligence / deep…
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Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeling framework and symmetry preserving properties make them suitable for both analog/RF and digital design. In the era of artificial intelligence / deep learning, compact models further enhanced our ability to explore RRAM and other NVM-based neuromorphic circuits. We have demonstrated simulation of RRAM neuromorphic circuits with Verilog-A based compact model at NCKU. Further abstraction with macromodels is performed to enable larger scale machine learning simulation.
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Submitted 5 May, 2020;
originally announced May 2020.
