-
Mitigating Imperfections in Mixed-Signal Neuromorphic Circuits
Authors:
Z. Fahimi,
M. R. Mahmoodi,
M. Klachko,
H. Nili,
H. Kim,
D. B. Strukov
Abstract:
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices and circuits are prone to imperfections, such as temperature dependency, noise, tuning error, etc., often leading to considerable performance degradation in ne…
▽ More
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices and circuits are prone to imperfections, such as temperature dependency, noise, tuning error, etc., often leading to considerable performance degradation in neural network implementations. Indeed, imperfections are major obstacles in the path of further progress and ultimate commercialization of these technologies. Hence, a practically viable approach should be developed to deal with these nonidealities and unleash the full potential of nonvolatile memories in neuromorphic systems. Here, for the first time, we report a comprehensive characterization of critical imperfections in two analog-grade memories, namely passively-integrated memristors and redesigned eFlash memories, which both feature long-term retention, high endurance, analog storage, low-power operation, and compact nano-scale footprint. Then, we propose a holistic approach that includes modifications in the training, tuning algorithm, memory state optimization, and circuit design to mitigate these imperfections. Our proposed methodology is corroborated on a hybrid software/experimental framework using two benchmarks: a moderate-size convolutional neural network and ResNet-18 trained on CIFAR-10 and ImageNet datasets, respectively. Our proposed approaches allow 2.5x to 9x improvements in the energy consumption of memory arrays during inference and sub-percent accuracy drop across 25-100 C temperature range. The defect tolerance is improved by >100x, and a sub-percent accuracy drop is demonstrated in deep neural networks built with 64x64 passive memristive crossbars featuring 25% normalized switching threshold variations.
△ Less
Submitted 9 July, 2021;
originally announced July 2021.
-
4K-Memristor Analog-Grade Passive Crossbar Circuit
Authors:
Hyungjin Kim,
Hussein Nili,
Mahmood Mahmoodi,
Dmitri Strukov
Abstract:
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such crossbars in neuromorphic computing circuits, variations of current-voltage characteristics of crosspoint devices must be substantially lower than those of memory…
▽ More
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such crossbars in neuromorphic computing circuits, variations of current-voltage characteristics of crosspoint devices must be substantially lower than those of memory cells with select transistors. Apparently, this requirement explains why there were so few demonstrations of neuromorphic system prototypes using passive crossbars. Here we report a 64x64 passive metal-oxide memristor crossbar circuit with ~99% device yield, based on a foundry-compatible fabrication process featuring etch-down patterning and low-temperature budget, conducive to vertical integration. The achieved ~26% variations of switching voltages of our devices were sufficient for programming 4K-pixel gray-scale patterns with an average tuning error smaller than 4%. The analog properties were further verified by experimentally demonstrating MNIST pattern classification with a fidelity close to the software-modeled limit for a network of this size, with an ~1% average error of import of ex-situ-calculated synaptic weights. We believe that our work is a significant improvement over the state-of-the-art passive crossbar memories in both complexity and analog properties.
△ Less
Submitted 26 June, 2019;
originally announced June 2019.
-
Nano-Intrinsic True Random Number Generation
Authors:
Jeeson Kim,
Taimur Ahmed,
Hussein Nili,
Nhan Duy Truong,
Jiawei Yang,
Doo Seok Jeong,
Sharath Sriram,
Damith C. Ranasinghe,
Omid Kavehei
Abstract:
Recent advances in predictive data analytics and ever growing digitalization and connectivity with explosive expansions in industrial and consumer Internet-of-Things (IoT) has raised significant concerns about security of people's identities and data. It has created close to ideal environment for adversaries in terms of the amount of data that could be used for modeling and also greater accessibil…
▽ More
Recent advances in predictive data analytics and ever growing digitalization and connectivity with explosive expansions in industrial and consumer Internet-of-Things (IoT) has raised significant concerns about security of people's identities and data. It has created close to ideal environment for adversaries in terms of the amount of data that could be used for modeling and also greater accessibility for side-channel analysis of security primitives and random number generators. Random number generators (RNGs) are at the core of most security applications. Therefore, a secure and trustworthy source of randomness is required to be found. Here, we present a differential circuit for harvesting one of the most stochastic phenomenon in solid-state physics, random telegraphic noise (RTN), that is designed to demonstrate significantly lower sensitivities to other sources of noises, radiation and temperature fluctuations. We use RTN in amorphous SrTiO3-based resistive memories to evaluate the proposed true random number generator (TRNG). Successful evaluation on conventional true randomness tests (NIST tests) has been shown. Robustness against using predictive machine learning and side-channel attacks have also been demonstrated in comparison with non-differential readouts methods.
△ Less
Submitted 21 January, 2017;
originally announced January 2017.
-
Highly-Secure Physically Unclonable Cryptographic Primitives Using Nonlinear Conductance and Analog State Tuning in Memristive Crossbar Arrays
Authors:
Hussein Nili,
Gina C. Adam,
Mirko Prezioso,
Jeeson Kim,
Farnood Merrikh-Bayat,
Omid Kavehei,
Dmitri B. Strukov
Abstract:
The rapidly expanding hardware-intrinsic security primitives are aimed at addressing significant security challenges of a massively interconnected world in the age of information technology. The main idea of such primitives is to employ instance-specific process-induced variations in electronic hardware as a source of cryptographic data. Among the emergent technologies, memristive devices provide…
▽ More
The rapidly expanding hardware-intrinsic security primitives are aimed at addressing significant security challenges of a massively interconnected world in the age of information technology. The main idea of such primitives is to employ instance-specific process-induced variations in electronic hardware as a source of cryptographic data. Among the emergent technologies, memristive devices provide unique opportunities for security applications due to the underlying stochasticity in their operation. Herein, we report a prototype of a robust, dense, and reconfigurable physical unclonable function primitives based on the three-dimensional passive metal-oxide memristive crossbar circuits, by making positive use of process-induced variations in the devices' nonlinear I-Vs and their analog tuning. We first characterize security metrics for a basic building block of the security primitives based on a two layer stack with monolithically integrated 10x10 250-nm half-pitch memristive crossbar circuits. The experimental results show that the average uniformity and diffusivity, measured on a random sample of 6,000 64-bit responses, out of ~697,000 total, is close to ideal 50% with 5% standard deviation for both metrics. The uniqueness, which was evaluated on a smaller sample by readjusting conductances of crosspoint devices within the same crossbar, is also close to the ideal 50% +/- 1%, while the smallest bit error rate, i.e. reciprocal of reliability, measured over 30-day window under +/-20% power supply variations, was ~ 1.5% +/- 1%. We then utilize multiple instances of the basic block to demonstrate physically unclonable functional primitive with 10-bit hidden challenge generation that encodes more than 10^19 challenge response pairs and has comparable uniformity, diffusiveness, and bit error rate.
△ Less
Submitted 23 November, 2016;
originally announced November 2016.
-
A Physical Unclonable Function with Redox-based Nanoionic Resistive Memory
Authors:
Jeeson Kim,
Taimur Ahmed,
Hussein Nili,
Jiawei Yang,
Doo Seok Jeong,
Paul Beckett,
Sharath Sriram,
Damith C. Ranasinghe,
Omid Kavehei
Abstract:
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear current-voltage characteristic, which in addition to known nano-fabrication process variation make them a promising candidate for the next generation of low-cost,…
▽ More
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear current-voltage characteristic, which in addition to known nano-fabrication process variation make them a promising candidate for the next generation of low-cost, low-power, tiny and secure Physically Unclonable Functions (PUFs). This paper takes advantage of this otherwise disadvantageous ReRAM feature using a combination of novel architectural and peripheral circuitry. We present a physical one-way function, nonlinear resistive Physical Unclonable Function (nrPUF), potentially applicable in variety of cyber-physical security applications given its performance characteristics. We experimentally verified performance of Valency Change Mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to a massive pool of Challenge-Response Pairs (CRPs), using a combination of experimental and simulation, our proposed PUF shows a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.
△ Less
Submitted 14 November, 2016;
originally announced November 2016.
