Abstract
Very high precision measurements of the electron Landé factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
- Received 2 April 2009
DOI:https://doi.org/10.1103/PhysRevB.79.193307
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