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{{Short description|American electrical engineer (
{{use mdy dates|date=May 2024}}
{{Infobox scientist
|name = Robert H. Dennard
|image = Robert Dennard.jpg
|caption =
|birth_date = {{birth
|birth_place = [[Terrell, Texas]], U.S.
|death_date = {{death
|death_place = {{nobr|[[Croton on Hudson, New York]], U.S.}}
|residence =
|citizenship =
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|workplaces =
|alma_mater =
|thesis_title = Behavior of the ferroresonant
|thesis_url = https://cmu.primo.exlibrisgroup.com/permalink/01CMU_INST/7fj865/alma991011155159704436
|thesis_year = 1958
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|influences =
|influenced =
|awards = [[Harvey Prize]]
|signature =
|footnotes =
}} '''Robert Heath Dennard''' (
==Biography==
Dennard was born in
In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent<ref>
In 1984, Dennard was elected a member of the [[National Academy of Engineering]] for pioneering work in FET technology, including invention of the one transistor dynamic RAM and contributions to scaling theory.
Dennard died on April 23, 2024, at the age of 91.<ref>{{
==Awards and honors==
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{{Authority control}}
{{DEFAULTSORT:Dennard, Robert H.}}
[[Category:1932 births]]
[[Category:2024 deaths]]
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[[Category:IBM Fellows]]
[[Category:Members of the United States National Academy of Engineering]]
[[Category:IEEE Medal of Honor recipients]]
[[Category:Members of the American Philosophical Society]]
[[Category:Kyoto laureates in Advanced Technology]]
[[Category:Benjamin Franklin Medal (Franklin Institute) laureates]]
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