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'''Quantum electronics''' is a term that was used mainly between the 1950s and 1970s<ref>{{Cite book |last=Brunner |first=Witlof |title=Quantenelektronik |last2=Radloff |first2=Wolfgang |last3=Junge |first3=Klaus |publisher=[[Deutscher Verlag der Wissenschaften]] |year=1975 |language=de}}</ref> to denote the area of [[physics]] dealing with the effects of [[quantum mechanics]] on the behavior of [[electron]]s in matter, together with their interactions with [[photon]]s. Today, it is rarely considered a sub-field in its own right, and it has been absorbed by other fields. [[Solid state physics]] regularly takes quantum mechanics into account, and is usually concerned with electrons. Specific applications of quantum mechanics in [[electronics]] is researched within [[semiconductor physics]]. The term also encompassed the basic processes of [[laser]] operation, which is today studied as a topic in quantum optics. Usage of the term overlapped early work on the [[quantum Hall effect]] and [[quantum cellular automata]].
[[File:MIT20120424.jpg|thumb|MIT's Official Cover Page reporting the [[carrier scattering | Tang-Dresselhaus Theory]] of electronic transport in different systems.]]
In quantum electronics, the quantum hopping induced transport of electrons become more important than [[ballistic transport | ballistic]] and [[diffusion | diffusive]] transport. According to the Rode's Model by [[Daniel Rode]] at the [[Bell Labs]]<ref name=”RodeModel1”>{{Cite journal | doi = 10.1103/PhysRevB.2.1012 | title = Electron mobility in direct-gap polar semiconductors | journal = Physical Review B | volume = 2 | pages = 1012| year = 1970| last1 = Rode | first1 = Daniel }}</ref><ref name=”RodeModel2”>{{Cite journal | doi = 10.1016/S0080-8784(08)60331-2 | title =Low-field electron transport | journal = Semiconductors and Semimetals | volume = 10 | pages =1-89| year = 1975| last1 = Rode | first1 = Daniel }}</ref> and the [[carrier scattering | Tang-Dresselhaus Theory]] by [[Shuang Tang]] and [[Mildred Dresselhaus]]<ref>{{cite arXiv |last1=Tang |first1=Shuang|last2=Dresselhaus|first2=Mildred |eprint=1410.4907 |title=New Method to Detect the Transport Scattering Mechanisms of Graphene Carriers |date=2014 }}</ref> at the [[Massachusetts Institute of Technology]], the mechanism(s) of quantum transport can still be detected by observing the maximum value of [[entropy]] carried per electron through measurement of the [[Seebeck coefficient | thermopower]]. <ref name=”graphene”>{{Cite journal | doi = 10.1038/s41598-018-28288-y| title = Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering| journal = Scientific Reports| volume = 8| pages = 10597| year = 2018| last1 = Tang | first1 = Shuang }}</ref><ref>{{Cite journal| title= Detecting the major charge-carrier scattering mechanism in graphene antidot lattices | doi=10.1016/j.carbon.2018.12.080 | journal=Carbon | volume=144 | pages=601-607 | year=2019| last1=Xu | first1=Dongchao}}</ref><ref name=”CNT”>{{Cite journal | doi =10.1038/s41598-022-06078-x| title = Inferring the energy sensitivity and band gap of electronic transport in a network of carbon nanotubes | journal = Scientific Reports | volume = 12| pages = 2060| year = 2022| last1 = Tang | first1 = Shuang }}</ref><ref name="DTIC">{{cite report|last=Hao |first=Qing| date =2019| title= Transport Property Studies of Structurally Modified Graphene| url=https://apps.dtic.mil/sti/citations/AD1085620 | publisher =Defense Technical Information Center | location =Arlington, VA}}</ref>
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