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{{short description|Imaginary part of electrical admittance}}
In [[electrical engineering]], '''susceptance''' (''B'') is the imaginary part of [[admittance]], where the real part is [[Electrical conductance|conductance]]. The [[multiplicative inverse|reciprocal]] of admittance is [[Electrical impedance|impedance]], where the imaginary part is [[Electrical reactance|reactance]] and the real part is [[Electrical resistance|resistance]]. In [[SI]] units, susceptance is measured in [[siemens (unit)|siemens]]. [[Oliver Heaviside]] first defined this property in June 1887.<ref>{{cite book |last=Heaviside |first=Oliver |title=Electrical Papers |volume=2 |year=1892 |publisher=Macmillan and Co. |place=London, UK; New York, NY |url=https://archive.org/details/bub_gb_bywPAAAAIAAJ |page=[https://archive.org/details/bub_gb_bywPAAAAIAAJ/page/n349 330]}}</ref>{{failed verification}}

In [[electrical engineering]], '''susceptance''' ({{mvar|B}}) is the [[Imaginary unit|imaginary]] part of [[admittance]] ({{math|1=''Y'' = ''G'' + ''jB''}}), where the [[real part]] is [[Electrical conductance|conductance]] ({{mvar|G}}). The [[multiplicative inverse|reciprocal]] of admittance is [[Electrical impedance|impedance]] ({{math|1=''Z'' = ''R'' + ''jX''}}), where the imaginary part is [[Electrical reactance|reactance]] ({{mvar|X}}) and the real part is [[Electrical resistance|resistance]] ({{mvar|R}}). In [[SI]] units, susceptance is measured in [[siemens (unit)|siemens]] (S).

==Origin==
The term was coined by [[Charles Proteus Steinmetz|C.P. Steinmetz]] in a 1894 paper.<ref>
{{cite journal
|first=C.P. |last=Steinmetz |author-link=Charles Proteus Steinmetz
|date=May 1894
|title=On the law of hysteresis (part III), and the theory of ferric inductances
|journal=Transactions of the American Institute of Electrical Engineers
|volume=11 |pages=570–616
|doi=10.1109/T-AIEE.1894.4763808 |s2cid=51648079 |url=https://ieeexplore.ieee.org/document/4763808
}}
</ref>

In some sources [[Oliver Heaviside]] is given credit for coining the term,<ref>
{{cite book
|first=Graydon |last=Wetzer
|year=2019
|section=Wayfinding ''re/dicto''
|pages=295–324
|editor1=Flynn, Susan
|editor2=Mackay, Antonia
|title=Surveillance, Architecture and Control: Discourses on spatial culture
|publisher=Springer
|isbn=978-3030003715
}}
</ref> or with introducing the concept under the name ''permittance''.<ref>For example:<br/>
{{cite book
|first1=Sverre |last1=Grimnes
|first2=Orjan G. |last2=Martinsen
|title=Bioimpedance and Bioelectricity Basics
|page=499
|publisher=Academic Press
|year=2014
|isbn=978-0124115330
}}
</ref>
This claim is mistaken according to Steinmetz's biographer.<ref>
{{cite book
|first=Ronald R. |last=Kline
|year=1992
|title=Steinmetz: Engineer and Socialist
|page=88
|place=Baltimore, MD
|publisher=Johns Hopkins University Press
|isbn=0801842980
}}
</ref>
The term ''susceptance'' does not appear anywhere in Heaviside's collected works, and Heaviside used the term ''permittance'' to mean [[capacitance]], not ''susceptance''.<ref>
{{cite book
|first=Ido |last=Yavetz
|year=2011
|title=From Obscurity to Enigma: The work of Oliver Heaviside, 1872–1889
|publisher=Springer
|isbn=978-3034801775
|url=https://books.google.com/books?id=JgXZQTeYby8C
|via=Google Books
}}
</ref><!-- Be cautious with sources from 21st century that make this claim - there may be some circular copying from Wikipedia going on! -->


==Formula==
==Formula==
The general equation defining admittance is given by
The general equation defining admittance is given by
:<math>Y = G + j B \,</math>
<math display=block>Y = G + j B \,</math>


where,
where
:{{mvar|Y}} is the complex [[admittance]], measured in [[siemens (unit)|siemens]].
:{{mvar|G}} is the real-valued [[Electrical conductance|conductance]], measured in siemens.
:{{mvar|j}} is the [[imaginary unit]] (i.e. {{math|''j''² {{=}} &minus;1}}), and
:{{mvar|B}} is the real-valued susceptance, measured in siemens.


{{plainlist|1=
The admittance ({{mvar|Y}}) is the inverse of the impedance ({{mvar|Z}})
* {{mvar|Y}} is the complex [[admittance]], measured in [[siemens (unit)|siemens]];
* {{mvar|G}} is the real-valued [[Electrical conductance|conductance]], measured in siemens;
* {{mvar|j}} is the [[imaginary unit]] (i.e. {{math|''j''² {{=}} &minus;1}}); and
* {{mvar|B}} is the real-valued susceptance, measured in siemens.
|indent=1}}


The admittance ({{mvar|Y}}) is the [[Multiplicative inverse|reciprocal]] of the impedance ({{mvar|Z}}), if the impedance is not zero:
:<math>Y = \frac{1}{Z} = \frac{1}{R + j X} = \left( \frac{R}{\;R^2+X^2} \right) + j \left( \frac{-X\;\;}{\;R^2+X^2} \right) \,</math>

<math display=block>Y = \frac{1}{Z} = \frac{1}{\, R + j X \,} = \left( \frac{1}{\, R + j X \,} \right) \left( \frac{\, R - j X \,}{\, R - j X \,} \right) = \left( \frac{R}{\;R^2+X^2} \right) + j \left( \frac{-X\;\;}{\;R^2+X^2} \right) \,</math>


and
and


:<math>B = \operatorname{Im}(Y) = \frac{-X\;}{\;R^2+X^2} = \frac{-X~\;}{~\;\left| Z \right|^2}</math>
<math display=block>B \equiv \operatorname\mathcal{I_m}\{\, Y \,\} = \frac{-X\;}{\;R^2+X^2} = \frac{-X~\;}{~\;\left| Z \right|^2\,} ~,</math>


where
where


{{plainlist|1=
:<math>Z = R + j X \,</math>
* <math>Z = R + j X \,;</math>
:{{mvar|Z}} is the complex [[electrical impedance|impedance]], measured in [[ohm (unit)|ohms]]
:{{mvar|R}} is the real-valued [[electrical resistance|resistance]], measured in ohms
* {{mvar|Z}} is the complex [[electrical impedance|impedance]], measured in [[ohm (unit)|ohms]];
:{{mvar|X}} is the real-valued [[Reactance (electronics)|reactance]], measured in ohms.
* {{mvar|R}} is the real-valued [[electrical resistance|resistance]], measured in ohms; and
* {{mvar|X}} is the real-valued [[Reactance (electronics)|reactance]], measured in ohms.
|indent=1}}


The susceptance <math>B</math> is the imaginary part of the admittance <math>Y</math>.
The susceptance <math>B</math> is the imaginary part of the admittance <math>Y~.</math>


The magnitude of admittance is given by:
The magnitude of admittance is given by:


:<math>\left| Y \right| = \sqrt{G^2 + B^2\;} \,</math>
<math display=block>\left| Y \right| = \sqrt{G^2 + B^2\;} ~.</math>


And similar formulas transform admittance into impedance, hence susceptance ({{mvar|B}}) into reactance ({{mvar|X}}):
And similar formulas transform admittance into impedance, hence susceptance ({{mvar|B}}) into reactance ({{mvar|X}}):


:<math>Z = \frac{1}{Y} = \frac{1}{G + j B} = \left( \frac{G}{\;G^2+B^2} \right) + j \left( \frac{-B\;\;}{\;G^2+B^2} \right) \,</math>
<math display=block>Z = \frac{1}{Y} = \frac{1}{G + j B} = \left( \frac{G}{\;G^2+B^2} \right) + j \left( \frac{-B\;\;}{\;G^2+B^2} \right) ~.</math>


hence
hence


:<math>X = \operatorname{Im}(Z) =\frac{-B\;}{\;G^2+B^2} = \frac{-B~\;}{~\;\left| Y \right|^2}</math>.
<math display=block>X \equiv \operatorname\mathcal{I_m}\{\, Z \,\} = \frac{\,-B\;~}{\;G^2+B^2} = \frac{\,-B~\;}{~\;\left| Y \right|^2\,} ~.</math>


The reactance and susceptance are only reciprocals in the absence of either resistance or conductance (only if either {{math|''R'' {{=}} 0}} or {{math|''G'' {{=}} 0}}).
The reactance and susceptance are only reciprocals in the absence of either resistance or conductance (only if either {{math|''R'' {{=}} 0}} or {{math|''G'' {{=}} 0}}, either of which implies the other, as long as {{math|''Z'' ≠ 0}}, or equivalently as long as {{math|''Y'' ≠ 0}}).


== Relation to capacitance ==
== Relation to capacitance ==
In electronic and semiconductor devices, transient or frequency-dependent current between terminals contains both conduction and displacement components. Conduction current is related to moving charge carriers (electrons, holes, ions, etc.), while displacement current is caused by time-varying electric field. Carrier transport is affected by electric field and by a number of physical phenomena, such as carrier drift and diffusion, trapping, injection, contact-related effects, and impact ionization. As a result, device [[admittance]] is frequency-dependent, and the simple electrostatic formula for capacitance, <math>C = \frac{q}{V},</math> is not applicable. A more general definition of capacitance, encompassing electrostatic formula, is:<ref name="LauxCapacitance">{{cite journal |last=Laux |first=S.E. |date=Oct 1985 |title=Techniques for small-signal analysis of semiconductor devices |journal=IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |volume=4 |issue=4 |pages=472–481 |doi=10.1109/TCAD.1985.1270145}}</ref>
In electronic and semiconductor devices, transient or frequency-dependent current between terminals contains both conduction and displacement components. Conduction current is related to moving charge carriers (electrons, holes, ions, etc.), while displacement current is caused by time-varying electric field. Carrier transport is affected by electric field and by a number of physical phenomena, such as carrier drift and diffusion, trapping, injection, contact-related effects, and impact ionization. As a result, device [[admittance]] is frequency-dependent, and the simple electrostatic formula for capacitance, <math>C = \frac{q}{V}~,</math> is not applicable.


A more general definition of capacitance, encompassing electrostatic formula, is:<ref name="LauxCapacitance">{{cite journal |last=Laux |first=S.E. |date=Oct 1985 |title=Techniques for small-signal analysis of semiconductor devices |journal=IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |volume=4 |issue=4 |pages=472–481 |doi=10.1109/TCAD.1985.1270145 |s2cid=13058472}}</ref>
: <math>C = \frac{\operatorname{Im}(Y)}{\omega} \, ,</math>


<math display=block>C = \frac{~\operatorname\mathcal{I_m}\{\, Y \,\}~}{\omega} = \frac{B}{~\omega~} ~ ,</math>
where <math>Y</math> is the device admittance, evaluated at the angular frequency in question, and <math>\omega</math> is the angular frequency. It is common for electrical components to have slightly reduced capacitances at extreme frequencies, due to slight inductance of conductors used to make capacitors (not just the leads), and [[permittivity]] changes in insulating materials with frequency: {{mvar|C}} is very nearly, but not quite a constant.

where <math>Y</math> is the device admittance, and <math>B</math> is the susceptance, both evaluated at the angular frequency in question, and <math>\omega</math> is that angular frequency. It is common for electrical components to have slightly reduced capacitances at extreme frequencies, due to slight inductance of the internal conductors used to make capacitors (not just the leads), and [[permittivity]] changes in insulating materials with frequency: {{mvar|C}} is ''very nearly'', but ''not quite'' a constant.


==Relationship to reactance==
==Relationship to reactance==
[[Electrical reactance|Reactance]] is defined as the imaginary part of [[electrical impedance]], and is ''analogous'' but not generally equal to the [[reciprocal]] of the susceptance.
[[Electrical reactance|Reactance]] is defined as the imaginary part of [[electrical impedance]], and is ''analogous'' to but not generally equal to the negative reciprocal of the susceptance – that is their reciprocals are equal and opposite only in the special case where the real parts vanish (either zero resistance or zero conductance). In the special case of entirely zero admittance or exactly zero impedance, the relations are encumbered by infinities.


However, for purely-reactive impedances (which are purely-susceptive admittances), the susceptance is equal to negative the inverse of the [[Electrical reactance|reactance]].
However, for purely-reactive impedances (which are purely-susceptive admittances), the susceptance is equal to the negative [[reciprocal (mathematics)|reciprocal]] of the [[Electrical reactance|reactance]], except when either is zero.


In mathematical notation:
In mathematical notation:


:<math>G = 0 \iff R = 0 \iff B = -\frac{1}{X}</math>
:<math display=block>\forall ~ Z \ne 0 ~ \Leftrightarrow ~ Y \ne 0 \quad \Longrightarrow \quad G = 0 \Leftrightarrow R = 0 \quad \iff \quad B = -\frac{1}{\, X \,} ~.</math>

The negation is not present in the relationship between [[electrical resistance]] and the analogue of conductance ''G'', which equals <math>\operatorname{Re}(Y)</math>.


The minus sign is not present in the relationship between [[electrical resistance]] and the analogue of conductance <math>~ G \equiv \operatorname\mathcal{R_e}\{\, Y \,\} ~,</math> but otherwise a similar relation holds for the special case of reactance-free impedance (or susceptance-free admittance):
:<math>B = 0 \iff X = 0 \iff G = \frac{1}{R}</math>
:<math display=block>\forall ~ Z \ne 0 ~ \Leftrightarrow ~ Y \ne 0 \quad \Longrightarrow \quad B = 0 \Leftrightarrow X = 0 \quad \iff \quad G = +\frac{1}{\, R \,}</math>


If the imaginary unit is included, we get
If the imaginary unit is included, we get


:<math> jB = \frac{1}{jX}~,</math>
:<math display=block> jB = \frac{1}{\,jX\,} ~,</math>


for the resistance-free case since,
for the resistance-free case since,


:<math> { 1 \over j} = -j \ .</math>
:<math display=block> \frac{1}{\, j \,} = -j ~.</math>


==Applications==
==Applications==
High susceptance materials are used in [[susceptor|susceptors]] built into microwavable food packaging for their ability to convert [[microwave|microwave radiation]] into heat.<ref>{{cite journal |last1=Labuza |first1=T. |last2=Meister |first2=J. |title=An alternate method for measuring the heating potential of microwave susceptor films |journal=Journal of International Microwave Power and Electromagnetic Energy |volume=27 |issue=4 |pages=205–208 |year=1992 |url=http://www.jmpee.org/JMPEE_PDFs/27-4_bl/JMPEE-Vol27-Pg205-Labuza.pdf |access-date=23 Sep 2011}}</ref>
High susceptance materials are used in [[susceptor|susceptors]] built into microwavable food packaging for their ability to convert [[microwave|microwave radiation]] into heat.<ref>{{cite journal |last1=Labuza |first1=T. |last2=Meister |first2=J. |title=An alternate method for measuring the heating potential of microwave susceptor films |journal=Journal of International Microwave Power and Electromagnetic Energy |volume=27 |issue=4 |pages=205–208 |year=1992 |doi=10.1080/08327823.1992.11688192 |bibcode=1992JMPEE..27..205L |url=http://www.jmpee.org/JMPEE_PDFs/27-4_bl/JMPEE-Vol27-Pg205-Labuza.pdf |access-date=23 Sep 2011}}</ref>


==See also==
==See also==

Latest revision as of 09:28, 11 September 2023

In electrical engineering, susceptance (B) is the imaginary part of admittance (Y = G + jB), where the real part is conductance (G). The reciprocal of admittance is impedance (Z = R + jX), where the imaginary part is reactance (X) and the real part is resistance (R). In SI units, susceptance is measured in siemens (S).

Origin

[edit]

The term was coined by C.P. Steinmetz in a 1894 paper.[1]

In some sources Oliver Heaviside is given credit for coining the term,[2] or with introducing the concept under the name permittance.[3] This claim is mistaken according to Steinmetz's biographer.[4] The term susceptance does not appear anywhere in Heaviside's collected works, and Heaviside used the term permittance to mean capacitance, not susceptance.[5]

Formula

[edit]

The general equation defining admittance is given by

where

The admittance (Y) is the reciprocal of the impedance (Z), if the impedance is not zero:

and

where

  • Z is the complex impedance, measured in ohms;
  • R is the real-valued resistance, measured in ohms; and
  • X is the real-valued reactance, measured in ohms.

The susceptance is the imaginary part of the admittance

The magnitude of admittance is given by:

And similar formulas transform admittance into impedance, hence susceptance (B) into reactance (X):

hence

The reactance and susceptance are only reciprocals in the absence of either resistance or conductance (only if either R = 0 or G = 0, either of which implies the other, as long as Z ≠ 0, or equivalently as long as Y ≠ 0).

Relation to capacitance

[edit]

In electronic and semiconductor devices, transient or frequency-dependent current between terminals contains both conduction and displacement components. Conduction current is related to moving charge carriers (electrons, holes, ions, etc.), while displacement current is caused by time-varying electric field. Carrier transport is affected by electric field and by a number of physical phenomena, such as carrier drift and diffusion, trapping, injection, contact-related effects, and impact ionization. As a result, device admittance is frequency-dependent, and the simple electrostatic formula for capacitance, is not applicable.

A more general definition of capacitance, encompassing electrostatic formula, is:[6]

where is the device admittance, and is the susceptance, both evaluated at the angular frequency in question, and is that angular frequency. It is common for electrical components to have slightly reduced capacitances at extreme frequencies, due to slight inductance of the internal conductors used to make capacitors (not just the leads), and permittivity changes in insulating materials with frequency: C is very nearly, but not quite a constant.

Relationship to reactance

[edit]

Reactance is defined as the imaginary part of electrical impedance, and is analogous to but not generally equal to the negative reciprocal of the susceptance – that is their reciprocals are equal and opposite only in the special case where the real parts vanish (either zero resistance or zero conductance). In the special case of entirely zero admittance or exactly zero impedance, the relations are encumbered by infinities.

However, for purely-reactive impedances (which are purely-susceptive admittances), the susceptance is equal to the negative reciprocal of the reactance, except when either is zero.

In mathematical notation:

The minus sign is not present in the relationship between electrical resistance and the analogue of conductance but otherwise a similar relation holds for the special case of reactance-free impedance (or susceptance-free admittance):

If the imaginary unit is included, we get

for the resistance-free case since,

Applications

[edit]

High susceptance materials are used in susceptors built into microwavable food packaging for their ability to convert microwave radiation into heat.[7]

See also

[edit]

References

[edit]
  1. ^ Steinmetz, C.P. (May 1894). "On the law of hysteresis (part III), and the theory of ferric inductances". Transactions of the American Institute of Electrical Engineers. 11: 570–616. doi:10.1109/T-AIEE.1894.4763808. S2CID 51648079.
  2. ^ Wetzer, Graydon (2019). "Wayfinding re/dicto". In Flynn, Susan; Mackay, Antonia (eds.). Surveillance, Architecture and Control: Discourses on spatial culture. Springer. pp. 295–324. ISBN 978-3030003715.
  3. ^ For example:
    Grimnes, Sverre; Martinsen, Orjan G. (2014). Bioimpedance and Bioelectricity Basics. Academic Press. p. 499. ISBN 978-0124115330.
  4. ^ Kline, Ronald R. (1992). Steinmetz: Engineer and Socialist. Baltimore, MD: Johns Hopkins University Press. p. 88. ISBN 0801842980.
  5. ^ Yavetz, Ido (2011). From Obscurity to Enigma: The work of Oliver Heaviside, 1872–1889. Springer. ISBN 978-3034801775 – via Google Books.
  6. ^ Laux, S.E. (Oct 1985). "Techniques for small-signal analysis of semiconductor devices". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 4 (4): 472–481. doi:10.1109/TCAD.1985.1270145. S2CID 13058472.
  7. ^ Labuza, T.; Meister, J. (1992). "An alternate method for measuring the heating potential of microwave susceptor films" (PDF). Journal of International Microwave Power and Electromagnetic Energy. 27 (4): 205–208. Bibcode:1992JMPEE..27..205L. doi:10.1080/08327823.1992.11688192. Retrieved 23 Sep 2011.