A highly condensed epoxy-oligosiloxane resin was synthesized using a sol-gel condensation reaction of (3-glycidoxypropyl)trimethoxysilane and diphenylsilanediol in the presence of solvent. A higher degree of condensation and a larger molecular size of oligosiloxanes were achieved compared to a condensation reaction without the addition of a solvent. The epoxy-hybrimer coating film was fabricated by the spin coating and thermal curing of the synthesized oligosiloxane resin. The leakage current density and the dielectric constant decreased from 25.9 to 7.6 nA cm(-2) and from 3.16 to 3.03, respectively, by using the solvent in the preparation. The hybrimer coating film of a highly condensed oligosiloxane resin had a high transmittance of over 90% in a wavelength between 300 and 800 nm. Thus, the epoxy-hybrimer coating film can be utilized as the passivation layer in the thin-film transistor.