Flexible low-voltage organic transistors with high thermal stability at 250 °C

Tomoyuki Yokota; Kazunori Kuribara; Takeyoshi Tokuhara; Ute Zschieschang; Hagen Klauk; Kazuo Takimiya; Yuji Sadamitsu; Masahiro Hamada; Tsuyoshi Sekitani; Takao Someya

doi:10.1002/adma.201300941

Flexible low-voltage organic transistors with high thermal stability at 250 °C

Adv Mater. 2013 Jul 19;25(27):3639-44. doi: 10.1002/adma.201300941. Epub 2013 Apr 25.

Authors

Tomoyuki Yokota¹, Kazunori Kuribara, Takeyoshi Tokuhara, Ute Zschieschang, Hagen Klauk, Kazuo Takimiya, Yuji Sadamitsu, Masahiro Hamada, Tsuyoshi Sekitani, Takao Someya

Affiliation

¹ Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

PMID: 23616376
DOI: 10.1002/adma.201300941

Abstract

Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated.

Keywords: organic electronics; organic field-effect transistors; self-assembled monolayer; thermal stability.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electricity
Organic Chemicals / chemistry*
Temperature*
Transistors, Electronic

Substances

Organic Chemicals