Interaction-Driven Metal-Insulator Transition in Strained Graphene

Phys Rev Lett. 2015 Oct 30;115(18):186602. doi: 10.1103/PhysRevLett.115.186602. Epub 2015 Oct 30.

Abstract

The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between π electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that, without strain, graphene remains metallic and changing the substrate from SiO_{2} to suspended samples hardly makes any difference. In contrast, applying a rather large-but experimentally realistic-uniform and isotropic strain of about 15% seems to be a promising route to making graphene an antiferromagnetic Mott insulator.