Compound Homojunction:Heterojunction Reduces Bulk and Interface Recombination in ZnO Photoanodes for Water Splitting

Ning Wang; Min Liu; Hairen Tan; Junhui Liang; Qixing Zhang; Changchun Wei; Ying Zhao; Edward H Sargent; Xiaodan Zhang

doi:10.1002/smll.201603527

Compound Homojunction:Heterojunction Reduces Bulk and Interface Recombination in ZnO Photoanodes for Water Splitting

Small. 2017 Mar;13(10). doi: 10.1002/smll.201603527. Epub 2017 Jan 5.

Authors

Ning Wang¹, Min Liu², Hairen Tan^{2

3}, Junhui Liang¹, Qixing Zhang¹, Changchun Wei¹, Ying Zhao¹, Edward H Sargent², Xiaodan Zhang¹

Affiliations

¹ Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
² Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada.
³ Photovoltaic Materials and Devices Laboratory, Delft University of Technology, 2628CD, Delft, The Netherlands.

PMID: 28054439
DOI: 10.1002/smll.201603527

Abstract

Photoelectrochemical water splitting is far more efficient thanks to the novel ZnOSe/ZnO/BZO thin-film photoanodes fabricated in this work. A novel structure is developed for simultaneously suppressing the charge recombination in the ZnO bulk and at the semiconductor-electrolyte interface. This structure achieves a five-fold enhancement in water-splitting performance, compared to that of pristine ZnO photoanodes, when illuminated using visible light.

Keywords: chemical vapor deposition; doping; photoanodes; photoelectrochemistry; structure-property relationships.

Publication types

Research Support, Non-U.S. Gov't