High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Baodan Zhao; Mojtaba Abdi-Jalebi; Maxim Tabachnyk; Hugh Glass; Varun S Kamboj; Wanyi Nie; Andrew J Pearson; Yuttapoom Puttisong; Karl C Gödel; Harvey E Beere; David A Ritchie; Aditya D Mohite; Siân E Dutton; Richard H Friend; Aditya Sadhanala

doi:10.1002/adma.201604744

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Adv Mater. 2017 Jan;29(2). doi: 10.1002/adma.201604744. Epub 2016 Nov 7.

Authors

Affiliations

¹ Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
² Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.

PMID: 28066989
DOI: 10.1002/adma.201604744

Abstract

Low-bandgap CH₃ NH₃ (Pb_x Sn_1-_x )I₃ (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm² V^-1 s^-1 ) intrinsic carrier mobilities.

Keywords: Urbach energy; high mobility perovskites; lead-tin perovskite PV; low-bandgap perovskites.