Photoelectric response properties under UV/red light irradiation of ZnO nanorod arrays coated with vertically aligned MoS₂ nanosheets

MoS₂ with layered structure and distinct physical properties has attracted attention for electronic or optoelectronic devices. The photoelectric response properties of MoS₂/ZnO heterojunctions based devices fabricated by spin-coating MoS₂ nanosheets solutions on ZnO nanorod arrays (NRs) were investigated. The results revealed that MoS₂ nanosheets were vertically aligned on the surface of ZnO NRs and the devices exhibit good photoresponse stability and reproducibility under UV and red light illuminations. The vertically aligned MoS₂ nanosheets facilitate the fast photogenerated carrier separation and transport. The devices with few-layered MoS₂ nanosheets show a high responsivity and detectivity under UV and red light illuminations, which can be attributed to small contact resistance between MoS₂ nanosheets and ZnO NRs. These results provide important insights in the facile fabrication strategy and understanding electronic and optoelectronic devices based on the heterostructures with vertically aligned MoS₂.