Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Xiaodong Zhang; Chenxi Huang; Zeyu Li; Jun Fu; Jiaran Tian; Zhuping Ouyang; Yuliang Yang; Xiang Shao; Yulei Han; Zhenhua Qiao; Hualing Zeng

doi:10.1038/s41467-024-49058-7

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Nat Commun. 2024 May 30;15(1):4619. doi: 10.1038/s41467-024-49058-7.

Authors

Xiaodong Zhang^#^{1

2

3}, Chenxi Huang^#^{1

3

4}, Zeyu Li^#^{1

2

3}, Jun Fu^{1

2

3}, Jiaran Tian^{2

3}, Zhuping Ouyang^{2

3}, Yuliang Yang^{2

3}, Xiang Shao⁴, Yulei Han⁵, Zhenhua Qiao^{1

2

3}, Hualing Zeng^{6

7

8}

Affiliations

¹ International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China.
² Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
³ CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China.
⁴ Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui, China.
⁵ Department of Physics, Fuzhou University, Fuzhou, China.
⁶ International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China. [email protected].
⁷ Hefei National Laboratory, University of Science and Technology of China, Hefei, China. [email protected].
⁸ CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, China. [email protected].

^# Contributed equally.

Abstract

Since the first report on single-layer MoS₂ based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.