An infrared (IR) absorber is a crucial component for thermal detectors, requiring high absorptance over a broad wavelength range while maintaining low heat capacity for optimal performance. Most thermal detectors use a thin film IR absorber that is suspended in air, supported by a layer beneath it for mechanical stability. However, this support layer increases heat capacity without contributing to IR absorptance, thereby reducing the performance of thermal detectors. In this paper, we introduce a polarization-independent nanowire array absorber using flanged nanowires with a C-shaped cross-section. This C-shaped design provides mechanical stability, eliminating the need for a support layer. Although nanowire array is generally known to exhibit polarization characteristics, the unique structure of the proposed flanged nanowires enables them to achieve polarization-independent properties, resulting in high absorptance similar to that of film absorbers. We theoretically analyzed the polarization-independent characteristics of the flanged nanowires using an optical circuit model and optimized the flanged nanowire structure using finite-difference time-domain (FDTD) simulations. Finally, we experimentally demonstrated the polarization-independent characteristics of the flanged nanowires and confirmed their high absorptance comparable to that of film absorbers.
© 2024. The Author(s).