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Tuning the Semiconducting Properties of Sexithiophene by alpha,omega-Substitution-alpha,omega-Diperfluorohexylsexithiophene: The First n-Type Sexithiophene for Thin-Film Transistors We thank DARPA (N00421-98-1187) and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-9632472) for support of this research. H.S. thanks the Royal Society for a University Research Fellowship (URF).
Facchetti A, Deng Y, Wang A, Koide Y, Sirringhaus H, Marks TJ, Friend RH. Facchetti A, et al. Angew Chem Int Ed Engl. 2000 Dec 15;39(24):4547-4551. doi: 10.1002/1521-3773(20001215)39:24<4547::aid-anie4547>3.0.co;2-j. Angew Chem Int Ed Engl. 2000. PMID: 11169666 No abstract available.
Building blocks for n-type molecular and polymeric electronics. Perfluoroalkyl- versus alkyl-functionalized oligothiophenes (nT; n = 2-6). Systematics of thin film microstructure, semiconductor performance, and modeling of majority charge injection in field-effect transistors.
Facchetti A, Mushrush M, Yoon MH, Hutchison GR, Ratner MA, Marks TJ. Facchetti A, et al. J Am Chem Soc. 2004 Oct 27;126(42):13859-74. doi: 10.1021/ja0489846. J Am Chem Soc. 2004. PMID: 15493947
274 results