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Page 1
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.
Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M. Fontserè A, et al. Among authors: porti m. Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12. Nanotechnology. 2012. PMID: 22971927
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.
Pérez-Tomás A, Catalàn G, Fontserè A, Iglesias V, Chen H, Gammon PM, Jennings MR, Thomas M, Fisher CA, Sharma YK, Placidi M, Chmielowska M, Chenot S, Porti M, Nafría M, Cordier Y. Pérez-Tomás A, et al. Among authors: porti m. Nanotechnology. 2015 Mar 20;26(11):115203. doi: 10.1088/0957-4484/26/11/115203. Epub 2015 Feb 26. Nanotechnology. 2015. PMID: 25719801 Free article.
Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization.
Vescio G, Martín G, Crespo-Yepes A, Claramunt S, Alonso D, López-Vidrier J, Estradé S, Porti M, Rodríguez R, Peiró F, Cornet A, Cirera A, Nafría M. Vescio G, et al. Among authors: porti m. ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23659-23666. doi: 10.1021/acsami.9b01731. Epub 2019 Jun 21. ACS Appl Mater Interfaces. 2019. PMID: 31180626
On the Aging of OTFTs and Its Impact on PUFs Reliability.
Porti M, Palau G, Crespo-Yepes A, Arnal Rus A, Ogier S, Ramon E, Nafria M. Porti M, et al. Micromachines (Basel). 2024 Mar 26;15(4):443. doi: 10.3390/mi15040443. Micromachines (Basel). 2024. PMID: 38675255 Free PMC article.
Heavy metals in human bones in different historical epochs.
Martínez-García MJ, Moreno JM, Moreno-Clavel J, Vergara N, García-Sánchez A, Guillamón A, Portí M, Moreno-Grau S. Martínez-García MJ, et al. Among authors: porti m. Sci Total Environ. 2005 Sep 15;348(1-3):51-72. doi: 10.1016/j.scitotenv.2004.12.075. Sci Total Environ. 2005. PMID: 16162313