Najmaei S - Search Results

1

Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe.

Lei S, Ge L, Najmaei S, George A, Kappera R, Lou J, Chhowalla M, Yamaguchi H, Gupta G, Vajtai R, Mohite AD, Ajayan PM. Lei S, et al. Among authors: najmaei s. ACS Nano. 2014 Feb 25;8(2):1263-72. doi: 10.1021/nn405036u. Epub 2014 Jan 13. ACS Nano. 2014. PMID: 24392873

2

Synthesis and photoresponse of large GaSe atomic layers.

Lei S, Ge L, Liu Z, Najmaei S, Shi G, You G, Lou J, Vajtai R, Ajayan PM. Lei S, et al. Among authors: najmaei s. Nano Lett. 2013 Jun 12;13(6):2777-81. doi: 10.1021/nl4010089. Epub 2013 Jun 3. Nano Lett. 2013. PMID: 23731066

3

Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.

Yamaguchi H, Blancon JC, Kappera R, Lei S, Najmaei S, Mangum BD, Gupta G, Ajayan PM, Lou J, Chhowalla M, Crochet JJ, Mohite AD. Yamaguchi H, et al. Among authors: najmaei s. ACS Nano. 2015 Jan 27;9(1):840-9. doi: 10.1021/nn506469v. Epub 2015 Jan 5. ACS Nano. 2015. PMID: 25521210

4

Photoluminescence quenching and charge transfer in artificial heterostacks of monolayer transition metal dichalcogenides and few-layer black phosphorus.

Yuan J, Najmaei S, Zhang Z, Zhang J, Lei S, M Ajayan P, Yakobson BI, Lou J. Yuan J, et al. Among authors: najmaei s. ACS Nano. 2015 Jan 27;9(1):555-63. doi: 10.1021/nn505809d. Epub 2015 Jan 13. ACS Nano. 2015. PMID: 25569715

5

An Atomically Layered InSe Avalanche Photodetector.

Lei S, Wen F, Ge L, Najmaei S, George A, Gong Y, Gao W, Jin Z, Li B, Lou J, Kono J, Vajtai R, Ajayan P, Halas NJ. Lei S, et al. Among authors: najmaei s. Nano Lett. 2015 May 13;15(5):3048-55. doi: 10.1021/acs.nanolett.5b00016. Epub 2015 Apr 6. Nano Lett. 2015. PMID: 25822539

6

Correlation between droplet-induced strain actuation and voltage generation in single-wall carbon nanotube films.

Liu Z, Hu L, Liu J, Qiu C, Zhou H, Hashim DP, Shi G, Peng C, Najmaei S, Sun L, Lou J, Ajayan PM. Liu Z, et al. Among authors: najmaei s. Nano Lett. 2011 Dec 14;11(12):5117-22. doi: 10.1021/nl201910j. Epub 2011 Nov 3. Nano Lett. 2011. PMID: 22035168

7

Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.

Zhan Y, Liu Z, Najmaei S, Ajayan PM, Lou J. Zhan Y, et al. Among authors: najmaei s. Small. 2012 Apr 10;8(7):966-71. doi: 10.1002/smll.201102654. Epub 2012 Feb 15. Small. 2012. PMID: 22334392

8

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.

Najmaei S, Liu Z, Zhou W, Zou X, Shi G, Lei S, Yakobson BI, Idrobo JC, Ajayan PM, Lou J. Najmaei S, et al. Nat Mater. 2013 Aug;12(8):754-9. doi: 10.1038/nmat3673. Epub 2013 Jun 9. Nat Mater. 2013. PMID: 23749265

9

Quantitative analysis of the temperature dependency in Raman active vibrational modes of molybdenum disulfide atomic layers.

Najmaei S, Ajayan PM, Lou J. Najmaei S, et al. Nanoscale. 2013 Oct 21;5(20):9758-63. doi: 10.1039/c3nr02567e. Nanoscale. 2013. PMID: 23963480

10

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Liu H, et al. Among authors: najmaei s. ACS Nano. 2014 Jan 28;8(1):1031-8. doi: 10.1021/nn405916t. Epub 2013 Dec 23. ACS Nano. 2014. PMID: 24351134

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