Bhattacharya P - Search Results

1

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS. Zhao C, et al. Among authors: bhattacharya p. Nanoscale. 2015 Oct 28;7(40):16658-65. doi: 10.1039/c5nr03448e. Nanoscale. 2015. PMID: 26242178

2

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon.

Frost T, Jahangir S, Stark E, Deshpande S, Hazari A, Zhao C, Ooi BS, Bhattacharya P. Frost T, et al. Among authors: bhattacharya p. Nano Lett. 2014 Aug 13;14(8):4535-41. doi: 10.1021/nl5015603. Epub 2014 Jul 3. Nano Lett. 2014. PMID: 24971807

3

Formation and nature of InGaN quantum dots in GaN nanowires.

Deshpande S, Frost T, Yan L, Jahangir S, Hazari A, Liu X, Mirecki-Millunchick J, Mi Z, Bhattacharya P. Deshpande S, et al. Among authors: bhattacharya p. Nano Lett. 2015 Mar 11;15(3):1647-53. doi: 10.1021/nl5041989. Epub 2015 Feb 9. Nano Lett. 2015. PMID: 25654749

4

Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity.

Heo J, Jahangir S, Xiao B, Bhattacharya P. Heo J, et al. Among authors: bhattacharya p. Nano Lett. 2013 Jun 12;13(6):2376-80. doi: 10.1021/nl400060j. Epub 2013 May 14. Nano Lett. 2013. PMID: 23634649

5

Structural and optical properties of disc-in-wire InGaN/GaN LEDs.

Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM. Yan L, et al. Among authors: bhattacharya p. Nano Lett. 2015 Mar 11;15(3):1535-9. doi: 10.1021/nl503826k. Epub 2015 Feb 11. Nano Lett. 2015. PMID: 25658444

6

InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.

Park Y, Jahangir S, Park Y, Bhattacharya P, Heo J. Park Y, et al. Among authors: bhattacharya p. Opt Express. 2015 Jun 1;23(11):A650-6. doi: 10.1364/OE.23.00A650. Opt Express. 2015. PMID: 26072889 Free article.

7

Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm).

Su GL, Frost T, Bhattacharya P, Dallesasse JM. Su GL, et al. Among authors: bhattacharya p. Opt Express. 2015 May 18;23(10):12850-65. doi: 10.1364/OE.23.012850. Opt Express. 2015. PMID: 26074539 Free article.

8

Quantum dot rolled-up microtube optoelectronic integrated circuit.

Bhowmick S, Frost T, Bhattacharya P. Bhowmick S, et al. Among authors: bhattacharya p. Opt Lett. 2013 May 15;38(10):1685-7. doi: 10.1364/OL.38.001685. Opt Lett. 2013. PMID: 23938911

9

Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission.

Su GL, Frost T, Bhattacharya P, Dallesasse JM, Chuang SL. Su GL, et al. Among authors: bhattacharya p. Opt Express. 2014 Sep 22;22(19):22716-29. doi: 10.1364/OE.22.022716. Opt Express. 2014. PMID: 25321741 Free article.

10

Room temperature electrically injected polariton laser.

Bhattacharya P, Frost T, Deshpande S, Baten MZ, Hazari A, Das A. Bhattacharya P, et al. Phys Rev Lett. 2014 Jun 13;112(23):236802. doi: 10.1103/PhysRevLett.112.236802. Epub 2014 Jun 10. Phys Rev Lett. 2014. PMID: 24972222

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