Li B - Search Results

1

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth.

Dou W, Benamara M, Mosleh A, Margetis J, Grant P, Zhou Y, Al-Kabi S, Du W, Tolle J, Li B, Mortazavi M, Yu SQ. Dou W, et al. Among authors: li b. Sci Rep. 2018 Apr 4;8(1):5640. doi: 10.1038/s41598-018-24018-6. Sci Rep. 2018. PMID: 29618825 Free PMC article.

2

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, Yu SQ. Ghetmiri SA, et al. Among authors: li b. Opt Lett. 2017 Feb 1;42(3):387-390. doi: 10.1364/OL.42.000387. Opt Lett. 2017. PMID: 28146483

3

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Pham T, Du W, Tran H, Margetis J, Tolle J, Sun G, Soref RA, Naseem HA, Li B, Yu SQ. Pham T, et al. Among authors: li b. Opt Express. 2016 Mar 7;24(5):4519-4531. doi: 10.1364/OE.24.004519. Opt Express. 2016. PMID: 29092279 Free article.

4

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.

Grant PC, Margetis J, Du W, Zhou Y, Dou W, Abernathy G, Kuchuk A, Li B, Tolle J, Liu J, Sun G, Soref RA, Mortazavi M, Yu SQ. Grant PC, et al. Among authors: li b. Nanotechnology. 2018 Nov 16;29(46):465201. doi: 10.1088/1361-6528/aadfaa. Epub 2018 Sep 7. Nanotechnology. 2018. PMID: 30191884

5

Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

Dou W, Zhou Y, Margetis J, Ghetmiri SA, Al-Kabi S, Du W, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu SQ. Dou W, et al. Among authors: li b. Opt Lett. 2018 Oct 1;43(19):4558-4561. doi: 10.1364/OL.43.004558. Opt Lett. 2018. PMID: 30272682

6

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission.

Olorunsola O, Ojo S, Abernathy G, Zhou Y, Amoah S, Grant PC, Dou W, Margetis J, Tolle J, Kuchuk A, Du W, Li B, Zhang YH, Yu SQ. Olorunsola O, et al. Among authors: li b. Nanotechnology. 2021 Nov 30;33(8). doi: 10.1088/1361-6528/ac38e4. Nanotechnology. 2021. PMID: 34763328

7

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

Grant J, Abernathy G, Olorunsola O, Ojo S, Amoah S, Wanglia E, Saha SK, Sabbar A, Du W, Alher M, Li BH, Yu SQ. Grant J, et al. Materials (Basel). 2021 Dec 11;14(24):7637. doi: 10.3390/ma14247637. Materials (Basel). 2021. PMID: 34947234 Free PMC article.

8

Investigation of the cap layer for improved GeSn multiple quantum well laser performance.

Abernathy G, Ojo S, Stanchu H, Zhou Y, Olorunsola O, Grant J, Du W, Jheng YT, Chang GE, Li B, Yu SQ. Abernathy G, et al. Among authors: li b. Opt Lett. 2023 Apr 1;48(7):1626-1629. doi: 10.1364/OL.484837. Opt Lett. 2023. PMID: 37221726

9

[No title available]

Li|Bingjie||B [No authors listed] PMID: 39562583

10

[No title available]

Li|Bao||B,Tong|Li||L,Yan|Bin||B [No authors listed] PMID: 39562568

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