Tolle J - Search Results

1

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth.

Dou W, Benamara M, Mosleh A, Margetis J, Grant P, Zhou Y, Al-Kabi S, Du W, Tolle J, Li B, Mortazavi M, Yu SQ. Dou W, et al. Among authors: tolle j. Sci Rep. 2018 Apr 4;8(1):5640. doi: 10.1038/s41598-018-24018-6. Sci Rep. 2018. PMID: 29618825 Free PMC article.

2

Ge_1-xSn_x alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.

Eales TD, Marko IP, Schulz S, O'Halloran E, Ghetmiri S, Du W, Zhou Y, Yu SQ, Margetis J, Tolle J, O'Reilly EP, Sweeney SJ. Eales TD, et al. Among authors: tolle j. Sci Rep. 2019 Oct 1;9(1):14077. doi: 10.1038/s41598-019-50349-z. Sci Rep. 2019. PMID: 31575881 Free PMC article.

3

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.

Grant PC, Margetis J, Du W, Zhou Y, Dou W, Abernathy G, Kuchuk A, Li B, Tolle J, Liu J, Sun G, Soref RA, Mortazavi M, Yu SQ. Grant PC, et al. Among authors: tolle j. Nanotechnology. 2018 Nov 16;29(46):465201. doi: 10.1088/1361-6528/aadfaa. Epub 2018 Sep 7. Nanotechnology. 2018. PMID: 30191884

4

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission.

Olorunsola O, Ojo S, Abernathy G, Zhou Y, Amoah S, Grant PC, Dou W, Margetis J, Tolle J, Kuchuk A, Du W, Li B, Zhang YH, Yu SQ. Olorunsola O, et al. Among authors: tolle j. Nanotechnology. 2021 Nov 30;33(8). doi: 10.1088/1361-6528/ac38e4. Nanotechnology. 2021. PMID: 34763328

5

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, Yu SQ. Ghetmiri SA, et al. Among authors: tolle j. Opt Lett. 2017 Feb 1;42(3):387-390. doi: 10.1364/OL.42.000387. Opt Lett. 2017. PMID: 28146483

6

Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

Dou W, Zhou Y, Margetis J, Ghetmiri SA, Al-Kabi S, Du W, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu SQ. Dou W, et al. Among authors: tolle j. Opt Lett. 2018 Oct 1;43(19):4558-4561. doi: 10.1364/OL.43.004558. Opt Lett. 2018. PMID: 30272682

7

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ. Conley BR, et al. Among authors: tolle j. Opt Express. 2014 Jun 30;22(13):15639-52. doi: 10.1364/OE.22.015639. Opt Express. 2014. PMID: 24977823 Free article.

8

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Pham T, Du W, Tran H, Margetis J, Tolle J, Sun G, Soref RA, Naseem HA, Li B, Yu SQ. Pham T, et al. Among authors: tolle j. Opt Express. 2016 Mar 7;24(5):4519-4531. doi: 10.1364/OE.24.004519. Opt Express. 2016. PMID: 29092279 Free article.

9

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menéndez J. D'Costa VR, et al. Among authors: tolle j. Phys Rev Lett. 2009 Mar 13;102(10):107403. doi: 10.1103/PhysRevLett.102.107403. Epub 2009 Mar 13. Phys Rev Lett. 2009. PMID: 19392159

10

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J. Fang YY, et al. Among authors: tolle j. J Am Chem Soc. 2008 Nov 26;130(47):16095-102. doi: 10.1021/ja806636c. J Am Chem Soc. 2008. PMID: 19032100

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