Dastgeer G - Search Results

1

Comparison of Electrical and Photoelectrical Properties of ReS₂ Field-Effect Transistors on Different Dielectric Substrates.

Nazir G, Rehman MA, Khan MF, Dastgeer G, Aftab S, Afzal AM, Seo Y, Eom J. Nazir G, et al. Among authors: dastgeer g. ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32501-32509. doi: 10.1021/acsami.8b06728. Epub 2018 Sep 17. ACS Appl Mater Interfaces. 2018. PMID: 30182711

2

Van der Waals heterojunction diode composed of WS₂ flake placed on p-type Si substrate.

Aftab S, Khan MF, Min KA, Nazir G, Afzal AM, Dastgeer G, Akhtar I, Seo Y, Hong S, Eom J. Aftab S, et al. Among authors: dastgeer g. Nanotechnology. 2018 Jan 26;29(4):045201. doi: 10.1088/1361-6528/aa9eb8. Nanotechnology. 2018. PMID: 29192890

3

Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

Nazir G, Khan MF, Aftab S, Afzal AM, Dastgeer G, Rehman MA, Seo Y, Eom J. Nazir G, et al. Among authors: dastgeer g. Nanomaterials (Basel). 2017 Dec 28;8(1):14. doi: 10.3390/nano8010014. Nanomaterials (Basel). 2017. PMID: 29283377 Free PMC article.

4

Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS₂ films.

Afzal AM, Khan MF, Nazir G, Dastgeer G, Aftab S, Akhtar I, Seo Y, Eom J. Afzal AM, et al. Among authors: dastgeer g. Sci Rep. 2018 Feb 21;8(1):3412. doi: 10.1038/s41598-018-21787-y. Sci Rep. 2018. PMID: 29467459 Free PMC article.

5

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS₂ van der Waals Heterojunction Diode.

Dastgeer G, Khan MF, Nazir G, Afzal AM, Aftab S, Naqvi BA, Cha J, Min KA, Jamil Y, Jung J, Hong S, Eom J. Dastgeer G, et al. ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13150-13157. doi: 10.1021/acsami.8b00058. Epub 2018 Apr 5. ACS Appl Mater Interfaces. 2018. PMID: 29578329

6

Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts.

Dastgeer G, Khan MF, Cha J, Afzal AM, Min KH, Ko BM, Liu H, Hong S, Eom J. Dastgeer G, et al. ACS Appl Mater Interfaces. 2019 Mar 20;11(11):10959-10966. doi: 10.1021/acsami.8b20231. Epub 2019 Mar 8. ACS Appl Mater Interfaces. 2019. PMID: 30807091

7

Distinct Detection of Thermally Induced Spin Voltage in Pt/WS₂/Ni₈₁Fe₁₉ by the Inverse Spin Hall Effect.

Dastgeer G, Shehzad MA, Eom J. Dastgeer G, et al. ACS Appl Mater Interfaces. 2019 Dec 26;11(51):48533-48539. doi: 10.1021/acsami.9b16476. Epub 2019 Dec 13. ACS Appl Mater Interfaces. 2019. PMID: 31790577

8

Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode.

Afzal AM , Javed Y , Akhtar Shad N , Iqbal MZ , Dastgeer G , Munir Sajid M , Mumtaz S . Afzal AM , et al. Among authors: dastgeer g. Nanoscale. 2020 Feb 6;12(5):3455-3468. doi: 10.1039/c9nr07971h. Nanoscale. 2020. PMID: 31990280

9

High-Performance p-BP/n-PdSe₂ Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse.

Afzal AM, Dastgeer G, Iqbal MZ, Gautam P, Faisal MM. Afzal AM, et al. Among authors: dastgeer g. ACS Appl Mater Interfaces. 2020 Apr 29;12(17):19625-19634. doi: 10.1021/acsami.9b22898. Epub 2020 Apr 15. ACS Appl Mater Interfaces. 2020. PMID: 32242654

10

WS₂/GeSe/WS₂ Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times.

Afzal AM, Iqbal MZ, Dastgeer G, Nazir G, Mumtaz S, Usman M, Eom J. Afzal AM, et al. Among authors: dastgeer g. ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39524-39532. doi: 10.1021/acsami.0c05114. Epub 2020 Aug 23. ACS Appl Mater Interfaces. 2020. PMID: 32805800

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