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Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

Jonathan M. Goodwill, Nitin Prasad, Brian D. Hoskins, Matthew W. Daniels, Advait Madhavan, Lei Wan, Tiffany S. Santos, Michael Tran, Jordan A. Katine, Patrick M. Braganca, Mark D. Stiles, and Jabez J. McClelland
Phys. Rev. Applied 18, 014039 – Published 18 July 2022
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Abstract

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a two-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3% with proper tuning of network parameters in 15 × 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

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  • Received 15 December 2021
  • Revised 5 May 2022
  • Accepted 12 May 2022

DOI:https://doi.org/10.1103/PhysRevApplied.18.014039

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Interdisciplinary Physics

Authors & Affiliations

Jonathan M. Goodwill1, Nitin Prasad2,3, Brian D. Hoskins1, Matthew W. Daniels1, Advait Madhavan2,4, Lei Wan5, Tiffany S. Santos5, Michael Tran5, Jordan A. Katine5, Patrick M. Braganca5, Mark D. Stiles1, and Jabez J. McClelland1,*

  • 1Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA
  • 2Associate, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA
  • 3Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland, USA
  • 4Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland, USA
  • 5Western Digital Research Center, Western Digital Corporation, San Jose, California, 95119, USA

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Vol. 18, Iss. 1 — July 2022

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