Pages that link to "Q1274781"
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The following pages link to Yasuhiko Arakawa (Q1274781):
Displayed 50 items.
- (Q19664936) (redirect page) (← links)
- (Q24868110) (redirect page) (← links)
- Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition (Q33531631) (← links)
- Demonstration of 12.5-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate (Q34521425) (← links)
- Nanocavity-based self-frequency conversion laser (Q35012135) (← links)
- Direct Observation of Two-Step Photon Absorption in an InAs/GaAs Single Quantum Dot for the Operation of Intermediate-Band Solar Cells (Q35671046) (← links)
- A Nanowire-Based Plasmonic Quantum Dot Laser (Q35974793) (← links)
- Design of large-bandwidth single-mode operation waveguides in silicon three-dimensional photonic crystals using two guided modes (Q39407485) (← links)
- Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors (Q41971054) (← links)
- Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 μm from InAs/InP quantum dots (Q46437596) (← links)
- Thresholdless quantum dot nanolaser (Q47435787) (← links)
- Ultraclean Single Photon Emission from a GaN Quantum Dot. (Q48243929) (← links)
- Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot. (Q51523918) (← links)
- All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001). (Q54518607) (← links)
- Group IV Light Sources to Enable the Convergence of Photonics and Electronics (Q57901179) (← links)
- Whispering Gallery Mode Resonances from Ge Micro-Disks on Suspended Beams (Q57901277) (← links)
- Demonstration of 25-Gbps optical data links on silicon optical interposer using FPGA transceiver (Q59099798) (← links)
- Fully Integrated Silicon Optical Interposers with High Bandwidth Density (Q59099813) (← links)
- High-density and wide-bandwidth optical interconnects with silicon optical interposers [Invited] (Q59099818) (← links)
- High-density optical interconnects by using silicon photonics (Q59099820) (← links)
- Large-scale silicon photonics integrated circuits for interconnect and telecom applications (Q59099829) (← links)
- High Density Optical Interconnects Integrated with Lasers, Optical Modulators and Photodetectors on a Single Silicon Chip (Q59099842) (← links)
- High-density Silicon Optical Interposer for Inter-chip Interconnects based on Compact and High Speed Components (Q59099844) (← links)
- Photonics-Electronics Convergent System Technology (Q59099847) (← links)
- Si Waveguide-Integrated Metal–Semiconductor–Metal and p–i–n-Type Ge Photodiodes Using Si-Capping Layer (Q59099848) (← links)
- Photonics-Electronics Convergence System for High Density Inter-Chip Interconnects by Using Silicon Photonics (Q59099852) (← links)
- High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers (Q59099854) (← links)
- Optical anisotropy ofm-plane nitride air-gap distributed Bragg reflector microcavities (Q59713413) (← links)
- Large vacuum Rabi splitting in an H0 photonic crystal nanocavity-quantum dot system (Q60317622) (← links)
- Single Photons from a Hot Solid-State Emitter at 350 K (Q61153104) (← links)
- Cavity Resonant Excitation of InGaAs Quantum Dots in Photonic Crystal Nanocavities (Q61158764) (← links)
- Probing the Excitonic States of Site-Controlled GaN Nanowire Quantum Dots (Q62384503) (← links)
- Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots (Q62384525) (← links)
- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires (Q62384538) (← links)
- Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature (Q62415840) (← links)
- Position-controlled InP nanowires with 10–100 μm pitches using Au-deposited SiO2/InP patterned substrates (Q62415843) (← links)
- Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots (Q62415845) (← links)
- Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substrates (Q62415846) (← links)
- Controlling the size of InAs quantum dots on Si1−xGex/Si(001) by metalorganic vapor-phase epitaxy (Q62415847) (← links)
- Demonstration of transverse-magnetic dominant gain in quantum dot semiconductor optical amplifiers (Q62415849) (← links)
- Formation of InAs1−xSbx quantum dots on vicinal InP(001) for 1.55-μm DFB laser applications (Q62415853) (← links)
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers (Q62415854) (← links)
- Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers (Q62415855) (← links)
- Controlling Polarization of 1.55-µm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001) (Q62415859) (← links)
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 µm bands (Q62415866) (← links)
- Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications (Q62415867) (← links)
- Two-Dimensional Photonic Crystal Resist Membrane Nanocavity Embedding Colloidal Dot-in-a-Rod Nanocrystals (Q62515308) (← links)
- Systematic Study of the Effects of Modulation p-Doping on 1.3-$\mu{\hbox {m}}$ Quantum-Dot Lasers (Q62518461) (← links)
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier (Q62519624) (← links)
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots (Q62519627) (← links)