Controlling the size of InAs quantum dots on Si1−xGex/Si(001) by metalorganic vapor-phase epitaxy (Q62415847)

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Controlling the size of InAs quantum dots on Si1−xGex/Si(001) by metalorganic vapor-phase epitaxy
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    Controlling the size of InAs quantum dots on Si1−xGex/Si(001) by metalorganic vapor-phase epitaxy (English)
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    Kenichi Kawaguchi
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    Hiroji Ebe
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    Mitsuru Ekawa
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    Akio Sugama
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    November 2009
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    165
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    1-2
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    103-106
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